unisonic technologies co., ltd mmbta94 pnp silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2010 unisonic technologies co., ltd qw-r206-008,e high voltage transistor ? features * collector-emitter voltage: v ceo =-400v * collector dissipation: p c(max) =350mw * low collector-emitter saturation voltage ? applications * telephone switching * high voltage switch lead-free: mmbta94l halogen-free: mmbta94g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing mmbta94-ae3-r mmbta94l-ae3-r MMBTA94G-AE3-R sot-23 e b c tape reel ? marking 4d l: lead free g: halogen free
mmbta94 pnp silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-008,e ? absolute maximum rating (ta=25 unless otherwise specified) parameter symbol rating unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -6 v collector current i c -300 ma collector dissipation (ta=25 c) p c 350 mw junction temperature t j +150 storage temperature t stg -40~+150 note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100a,ie=0 -400 v collector-emitter breakdown voltage bv ceo i c =-1ma,ib=0 -400 v collector-emitter breakdown voltage bv ces i c =-100a,v be =0 -400 v emitter-base breakdown voltage bv ebo i e =-100a,ic=0 -5 v collector cut-off current i cbo v cb =-300v,i e =0 -100 na collector cut-off current i ces v cb =-400v,v be =0 -1 a emitter cut-off current i ebo v eb =-4v,i c =0 100 na v ce =-10v,i c =-1ma 60 v ce =-10v,i c =-10ma 70 300 v ce =-10v,i c =-50ma 70 dc current gain (note) h fe v ce =-10v,i c =-100ma 40 i c =-10ma,i b =-1ma -0.20 v collector-emitter satu ration voltage v ce(sat) i c =-50ma,i b =-5ma -0.5 v base-emitter satura tion voltage v be(sat) i c =-10ma,i b =-1ma -0.75 v output capacitance cob v cb =-20v,i e =0, f=1mhz 7 pf note: pulse test: pw < 300s, duty cycle < 2%
mmbta94 pnp silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-008,e ? typical characteristics -1 -10 -100 -1000 1 10 100 1000 collector current, i c (ma) h fe ,dc current gain dc current gain collector current, i c (ma) -1 -10 -100 -1000 collector current, i c (ma) -1 -10 -100 -0.01 -0.1 -1.0 -10 -0.01 -0.1 -1.0 -10 base-emitter satu ration voltage, v be(sat) (v) base-emitter satu ration voltage collector-emitter saturation voltage, v ce(sat) (v) collector-emitter saturation volt age collector output capacitance 1 10 100 1000 -100 -10 -1 -0.1 collector base voltage (v) collector output capacitance (pf) v ce =-10v i c =10i b i c =10i b i e =0 f=1mhz utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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